Decoupling and ordering of multilayer graphene on C-face 3C-SiC(111)

CORRIGENDUM: Multiple π-bands and Bernal stacking of multilayer graphene on C-face SiC, revealed by nano-Angle Resolved Photoemission

The authors neglected to cite a related study that reports an ARPES experiment indicating the presence of multiple p bands in multilayer graphene on C-face SiC. 1 This is given below as Reference 1. In the present Article, nano-ARPES band mappings of individual graphene grains unambiguously show that multilayer C-face graphene exhibits multiple p-bands.

Multiple π-bands and Bernal stacking of multilayer graphene on C-face SiC, revealed by nano-Angle Resolved Photoemission

Only a single linearly dispersing π-band cone, characteristic of monolayer graphene, has so far been observed in Angle Resolved Photoemission (ARPES) experiments on multilayer graphene grown on C-face SiC. A rotational disorder that effectively decouples adjacent layers has been suggested to explain this. However, the coexistence of μm-sized grains of single and multilayer graphene with differe...

Stacking of adjacent graphene layers grown on C-face SiC

Controllable growth of vertically aligned graphene on C-face SiC

We investigated how to control the growth of vertically aligned graphene on C-face SiC by varying the processing conditions. It is found that, the growth rate scales with the annealing temperature and the graphene height is proportional to the annealing time. Temperature gradient and crystalline quality of the SiC substrates influence their vaporization. The partial vapor pressure is crucial as...

Large-area microfocal spectroscopic ellipsometry mapping of thickness and electronic properties of epitaxial graphene on Si- and C-face of 3C-SiC(111)

Vanya Darakchieva, A. Boosalis, A. A. Zakharov, T. Hofmann, M. Schubert, T. E. Tiwald, Tihomir Iakimov, Remigijus Vasiliauskas and Rositsa Yakimova, Large-area microfocal spectroscopic ellipsometry mapping of thickness and electronic properties of epitaxial graphene on Siand C-face of 3C-SiC(111), 2013, Applied Physics Letters, (102), 21, 213116. http://dx.doi.org/10.1063/1.4808379 Copyright: A...